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IRF7811WGPbF
Electrical Characteristics
Parameter
Min
Typ
Max
Units
Conditions
Drain-to-Source
Breakdown Voltage
Static Drain-Source
on Resistance
BV DSS
R DS(on)
30
–
9.0
–
12
V
m ?
V GS = 0V, I D = 250μA
V GS = 4.5V, I D = 15A ?
Current*
Gate Threshold Voltage
Drain-Source Leakage
Current
V GS(th)
I DSS
1.0
30
150
V
μA
V DS = V GS ,I D = 250μA
V DS = 24V, V GS = 0
V DS = 24V, V GS = 0,
Tj = 100°C
Gate-Source Leakage
Current
I GSS
±100
nA
V GS = ±12V
Total Gate Chg Cont FET
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Q gs2 + Q gd )
Output Charge
Gate Resistance
Turn-on Delay Time
Q G
Q G
Q GS1
Q GS2
Q GD
Q sw
Q oss
R G
t d (on)
22
16.3
3.5
1.2
8.8
10.1
12
2.0
11
33
4.0
nC
?
V GS =5.0V, I D =15A, V DS =16V
V GS = 5V, V DS < 100mV
V DS = 16V, I D = 15A, V GS = 5.0V
V DS = 16V, V GS = 0
V DD = 16V, I D = 15A
Rise Time
Turn-off Delay Time
Fall Time
t r
t d (off)
t f
11
29
9.9
ns
V GS = 5.0V
Clamped Inductive Load
Input Capacitance
C iss
–
2335
–
Output Capacitance
C oss
–
400
–
pF
V DS = 16V, V GS = 0
Reverse Transfer Capacitance C rss
–
119
–
Source-Drain Rating & Characteristics
Parameter
Min
Typ
Max
Units
Conditions
Diode Forward
Voltage*
Reverse Recovery
Charge ?
Reverse Recovery
Charge (with Parallel
V SD
Q rr
Q rr(s)
45
41
1.25
V
nC
nC
I S = 15A ? , V GS = 0V
di/dt ~ 700A/μs
V DS = 16V, V GS = 0V, I S = 15A
di/dt = 700A/μs
(with 10BQ040)
Schottky) ?
V DS = 16V, V GS = 0V, I S = 15A
Notes:
? Repetitive rating; pulse width limited by max. junction temperature.
? Pulse width ≤ 400 μs; duty cycle ≤ 2%.
? When mounted on 1 inch square copper board
? Typ = measured - Q oss
? Typical values of R DS (on) measured at V GS = 4.5V, Q G , Q SW and Q OSS
measured at V GS = 5.0V, I F = 15A.
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